Bias-selectable tricolor tunneling quantum dot infrared photodetector for atmospheric windows

Abstract
A tricolor infrared detector with bias-selectable peaks based on tunneling quantum dot infrared photodetector (T-QDIP) architecture is demonstrated. Photoabsorption takes place in In0.4Ga0.6As quantum dots (QDs) and the excited electrons are collected by resonant tunneling across an Al0.2Ga0.8AsIn0.1Ga0.9AsAl0.2Ga0.8As double barrier coupled to the QDs. The field dependent tunneling for excited carriers in T-QDIP is used to select the operating wavelength. This T-QDIP detector exhibits three distinct response peaks at 4.54.9±0.05 , 9.5±0.05 , and 16.9±0.1μm up to 80K . The peak detectivity is in the range of (1.06.0)×1012Jones at 50K . Bias polarity allows the selection of either the 9.5μm or the 16.9μm peak.