DLTS response due to localized states in hydrogenated amorphous silicon
- 1 December 1981
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 46 (3), 221-234
- https://doi.org/10.1016/0022-3093(81)90001-6
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Observation of electron and hole traps in hydrogenated amorphous silicon by voltage- and laser-excited deep level transient spectroscopySolar Cells, 1980
- Direct Measurement of the Bulk Density of Gap States in-Type Hydrogenated Amorphous SiliconPhysical Review Letters, 1980
- Schottky barrier profiles in amorphous silicon-based materialsJournal of Non-Crystalline Solids, 1980
- Tunneling in Hydrogenated Amorphous SiliconPhysical Review Letters, 1979
- Electronic density of states in discharge-produced amorphous siliconApplied Physics Letters, 1979
- Solar cells using discharge-produced amorphous siliconJournal of Electronic Materials, 1977
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Investigation of the density of localized states in a-Si using the field effect techniqueJournal of Non-Crystalline Solids, 1976
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Capacitance Energy Level Spectroscopy of Deep-Lying Semiconductor Impurities Using Schottky BarriersJournal of Applied Physics, 1970