The design of a high speed electron‐beam lithography column is described. Designed for use with a high speed raster scan system, the column produces a beam current of 600 nA in an 0.5 μm round spot, and has a deflection field of 5 mm2. The column uses a zirconiated thermal field emission cathode, two magnetic lenses, with an intermediate cross‐over for blanking purposes, and a two‐stage electrostatic deflection system, producing both speed and precision. The column is compatible with a 300 MHz pixel exposure rate and has an accuracy of better than ±0.125 μm (2σ).