Very low threshold vertical emitting laser operation in InP graphite photonic crystal slab on silicon
- 1 January 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (6), 526-528
- https://doi.org/10.1049/el:20030371
Abstract
Graphite-lattice photonic crystal structures in InP-based heterostructures transferred onto silicon, including a multi-quantum well active layer, have been designed and fabricated. 1.5 µm vertical emission laser operation was observed at room temperature, with very low threshold (below 50 µW).Keywords
This publication has 6 references indexed in Scilit:
- Structural tuning of guiding modes of line-defect waveguides of silicon-on-insulator photonic crystal slabsIEEE Journal of Quantum Electronics, 2002
- Introduction to the feature section on photonic crystal structures and applicationsIEEE Journal of Quantum Electronics, 2002
- Very-low-threshold photonic band-edge lasers from free-standing triangular photonic crystal slabsApplied Physics Letters, 2002
- Directional lasing oscillation of two-dimensional organic photonic crystal lasers at several photonic band gapsApplied Physics Letters, 2001
- InP 2D photonic crystal microlasers on silicon wafer: room temperature operation at 1.55 [micro sign]mElectronics Letters, 2001
- Coherent two-dimensional lasing action in surface-emitting laser with triangular-lattice photonic crystal structureApplied Physics Letters, 1999