Multiquantum well strained-layer lasers with improved low frequency response and very low damping

Abstract

Strained-layer In0.3Ga0.7As/GaAs multiquantum well lasers fabricated by chemically assisted ion beam etching have achieved a record 3 dB modulation bandwidth of 28 GHz. The low frequency rolloff and nonlinear gain coefficient have been improved substantially by employing a separate confinement heterostructure design that has a fast carrier capture time.