Optical and capacitance spectroscopy of InP:Fe
- 27 November 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (33), 5069-5079
- https://doi.org/10.1088/0022-3719/14/33/016
Abstract
Photocapacitance, DLTS, optical absorption and photoluminescence data are presented for iron- and iron-germanium-doped Czochralski single-crystal InP. The results demonstrate that the Fe2+ to Fe+ transition is not present within the InP band gap. A feature observed in photocapacitance and optical DLTS is attributed to the presence of the Fe4+ charge state, and features associated with the well known Fe3+ and Fe2+ states also occur. Photoluminescence measurements show an iron-related band near 0.5 eV, not previously reported in the literature.Keywords
This publication has 12 references indexed in Scilit:
- An energy scheme for interpreting deep-level photoconductivity and other recent optical measurement for Fe-doped InPJournal of Physics C: Solid State Physics, 1981
- Evidence for exciton binding at Ni impurity sites in ZnSeSolid State Communications, 1980
- A study of the deep acceptor levels of iron in InPJournal of Physics C: Solid State Physics, 1979
- Deep levels in Fe-doped InPPhysica Status Solidi (a), 1979
- ESR identification of the iron double electron trap state in GaPSolid State Communications, 1977
- Optical and ESR analysis of the Fe acceptor in InPSolid State Communications, 1977
- The electrical properties of n-type semi-insulating indium phosphideJournal of Physics C: Solid State Physics, 1976
- Semi-insulating properties of Fe-doped InPElectronics Letters, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Luminescent Transitions Associated With Divalent Copper Impurities and the Green Emission from Semiconducting Zinc OxidePhysical Review Letters, 1969