Ion current reduction in pinched electron beam diodes

Abstract
A new version of a particle‐in‐cell diode code has been written which permits the accurate treatment of higher‐current diodes with greater physical dimensions. Using this code, we have studied ways to reduce the ion current in large‐aspect‐ratio pinched electron beam diodes. In particular, we find that allowing the ions to reflex in such diodes lowers the ion to electron current ratio considerably. In a 3‐MV R/d=24 case this ratio was lowered by a factor of 6–8 compared with the corresponding nonreflexing‐ion diode, while still producing a superpinched electron beam.