Resistivity study of single crystals
- 1 June 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (21), 12640-12642
- https://doi.org/10.1103/physrevb.45.12640
Abstract
We have measured the resistivity ρ(T) on a number of high-quality single crystals of with x ranging from 0 to 0.50. The effects of increasing x are (1) falls sharply and disappears at x=0.40±0.05, (2) the onset of linear behavior in ρ(T) shifts to higher temperatures, (3) the high-temperature slope dρ(T)/dT increases, and (4) the residual resistivity (normalized to the carrier density) satisfies Matthiessen’s rule up to x=0.40. Localization effects sets in above this value.
Keywords
This publication has 14 references indexed in Scilit:
- Effect of Zn impurities on the normal-state Hall angle in single-crystal YBa_{2}Cu_{3-x}Zn_{x}O_{7-δ}Physical Review Letters, 1991
- Two-dimensional electron localization in bulk single crystals ofPhysical Review B, 1991
- Basic similarities among cuprate, bismuthate, organic, Chevrel-phase, and heavy-fermion superconductors shown by penetration-depth measurementsPhysical Review Letters, 1991
- Preparation and characterization of ultrathin Bi2Sr2CaCu2O8 single crystalsJournal of Applied Physics, 1990
- Normal-state transport properties of crystalsPhysical Review B, 1990
- Reversible Changes in the Superconducting Transition Temperature of Bi 2 Sr 2 CaCu 2 O 8 Single Crystals by Varying the Oxygen ConcentrationEurophysics Letters, 1989
- Universal Correlations between and (Carrier Density over Effective Mass) in High- Cuprate SuperconductorsPhysical Review Letters, 1989
- Effect of oxygen desorption on electrical transport inPhysical Review B, 1987
- Resistivity of and to 1100 K: Absence of saturation and its implicationsPhysical Review Letters, 1987
- Effects of defects on charge density waves in layered dichalcogenidesSolid State Communications, 1984