Use of Thin Si Crystals in Backscattering-Channeling Studies of the Si-SiO2Interface

Abstract

We report on new information obtained on the nature of the nonregistered Si layers at the Si-Si${\mathrm{O}}_2$ interface using MeV backscattering-channeling techniques on thin Si single crystals. Analysis of the scattering intensity from the front and back surfaces of the crystal allows us to conclude that the atoms in the nonregistered monolayers have a displacement from the "bulk" position between 0.1 and 1.0 Å.