Extended defects in GaN single crystals
- 3 May 2001
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 34 (10A), A148-A150
- https://doi.org/10.1088/0022-3727/34/10a/331
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Characterization of threading dislocations in GaN epitaxial layersApplied Physics Letters, 2000
- GaN substrates for molecular beam epitaxy growth of homoepitaxial structuresThin Solid Films, 2000
- Investigation of the atomic structure of the pure edge and a+c threading dislocations in gan layers grown by MBEMaterials Science and Engineering B, 1999
- The microstructure of gallium nitride monocrystals grown at high pressureJournal of Crystal Growth, 1996
- Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3Journal of Applied Physics, 1996
- Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxyApplied Physics Letters, 1995
- X-ray topographic studies of SiC crystals grown from vapour phaseJournal of Crystal Growth, 1983
- Directions of dislocation lines in crystals of ammonium hydrogen oxalate hemihydrate grown from solutionActa Crystallographica Section A, 1973