Galvanomagnetic Effects and Band Structure of Pure and Tin-Doped Single-Crystal Antimony

Abstract

Room-temperature resistivities, Hall coefficients, and magnetoresistivities at low magnetic fields are presented for unworked, preshaped, oriented single-crystal rods of 0.8 and 0.2% tin-doped and pure antimony grown at a fast rate. The data are interpreted in terms of two threefold sets of tilted mobility ellipsoids for the valence and conduction bands. For pure antimony our analysis yields an anisotropic hole and electron structure, in essential agreement with the result of an earlier analysis of somewhat different values for the same coefficients, and, in addition, an alternative structure for electrons. The alloy data are compatible with these ellipsoids upon isotropic scaling of the mobilities of each band and upon specifying unequal carrier densities. The latter show that each tin atom removes 0.3 carrier and that, if nonshifting overlapping bands of standard and inverted form and degenerate statistics apply, the hole band is 2.2 times as dense as the electron band at the Fermi energy for pure antimony. For 0.8% tin-doped antimony the ratio is 3.9, and about 2% tin should be needed for conduction by holes alone. By ascribing Shoenberg's de Haas-Van Alphen effective masses to the electrons, the band edge overlap is 0.19 eV and the hole Fermi energy is 0.06 eV for pure antimony; by ascribing them to holes, the corresponding values are 0.42 and 0.13 eV, respectively.