The annealing of the EPR-signal produced in silicon by plastic deformation
- 1 June 1970
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 31 (6), 1381-1387
- https://doi.org/10.1016/0022-3697(70)90142-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Versetzungsdichte und lokale abgleitung in germanium-einkristallenActa Metallurgica, 1967
- On the Low-Temperature Internal Friction in SiliconPhysica Status Solidi (b), 1967
- The Properties of the Low‐Temperature Internal Friction Peak in SiliconPhysica Status Solidi (b), 1967
- 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the DivacancyPhysical Review B, 1966
- Elektronenspin-resonanz in verformtem siliziumSolid State Communications, 1965
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the DivacancyPhysical Review B, 1965
- Stress-Assisted Precipitation on DislocationsJournal of Applied Physics, 1959
- Theory of diffusion-limited precipitationJournal of Physics and Chemistry of Solids, 1958
- Electrical Resistivity Study of Lattice Defects Introduced in Copper by 1.25-Mev Electron Irradiation at 80°KPhysical Review B, 1956