A Metal-Oxide-Semiconductor (MOS) Hall element
- 1 May 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (5), 571-580
- https://doi.org/10.1016/0038-1101(66)90172-9
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Gallium arsenide MOS transistorsSolid-State Electronics, 1965
- Hall Measurements on Silicon Field Effect Transistor StructuresIBM Journal of Research and Development, 1964
- Monolithic integrated circuitsIEEE Spectrum, 1964
- A silicon hall element for application in an analog multiplierSolid-State Electronics, 1964
- Der Geometrieeinfluß auf den Hall-Effekt bei rechteckigen HalbleiterplattenZeitschrift für Naturforschung A, 1958
- Analog Multiplier Based on the Hall EffectJournal of Applied Physics, 1958