High-mobility polymer gate dielectric pentacene thin film transistors

Abstract

We have fabricated pentacene organic thin film transistors with spin-coated polymer gate dielectric layers, including cross-linked polyvinylphenol and a polyvinylphenol-based copolymer, and obtained devices with excellent electrical characteristics, including carrier mobility as large as 3 ${\mathrm{cm}}^2/\mathrm{V s},$ subthreshold swing as low as 1.2 V/decade, and on/off current ratio of ${10}^5.$ For comparison, we have also fabricated pentacene transistors using thermally grown silicon dioxide as the gate dielectric and obtained carrier mobilities as large as 1 ${\mathrm{cm}}^2/\mathrm{V s}$ and subthreshold swing as low as 0.5 V/decade.