Correlation of experiments with a two-section-model theory of the saturation drain conductance of MOS transistors
- 31 December 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (12), 1149-1163
- https://doi.org/10.1016/0038-1101(68)90006-3
Abstract
No abstract availableKeywords
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