A penning type ion source with high efficiency and some applications

Abstract

A Penning type ion source has been developed for the application in definite sputtering experiments and surface etching. The source produces ion currents up to 200μA for energies between 2.5 and 50keV. By electrostatic ion optics the beam diameter can be varied From 0.3 to 20 mm by changing the focusing conditions. The distributions of intensity and energy will be discussed for different beam parameters. Some examples of different surface topographies generated by ion bombardment of single crystals of Pb, Ag and Al using this ion source are demonstrated.