Ion implant dose dependence of photocarrier radiometry at multiple excitation wavelengths
- 21 June 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (25), 5219-5221
- https://doi.org/10.1063/1.1765737
Abstract
The dependence of the photocarrier radiometric (PCR) signal on ion implant dose in Si is reported. The results show almost entirely monotonic behavior over a large range of industrially relevant fluences for , , , and implanted in wafers at various energies. In addition, the use of excitation sources with a range of absorption coefficients is shown to be very useful in improving the sensitivity of the amplitude to implant dose.
Keywords
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