Stark broadening of Si III and Si IV lines

Abstract

The halfwidths of seven Si III and four Si IV lines have been measured in a pulsed arc. The electron density of 5.8*10¹⁶ cm^-3 was determined by laser interferometry, while the electron temperature of 25600 K was measured from a Boltzmann plot of the relative intensities of the Cl III lines. The experimental Si III and Si IV Stark-profile halfwidths were compared with calculated values obtained from Baranger's semiclassical (1962) and Griem's semiempirical (1968) approaches. The agreement between experiment and semiempirical (1968) approaches. The agreement between experiment and semiempirical results is within 15%.