Microluminescence depth profiles and annealing effects in porous silicon
- 29 June 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (26), 3295-3297
- https://doi.org/10.1063/1.106724
Abstract
Cross‐sectional microluminescence measurements for 1 Ω cm 70 μm porous silicon samples show a continuous decrease of the photoluminescence band as a function of sample depth. No spectral shift is observed. For samples annealed at 390 °C, in addition to spectral intensity reduction, we observe the same redshift in all luminescence spectra independent of depth. A study of this luminescence redshift as a function of annealing temperature reveals a striking similarity to results observed for optical band gap shrinking of a‐Si:H as a function of hydrogen loss during annealing.Keywords
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