Thin films of the high-pressure polymorph of titania, TiO2-II, were grown by atomic-layer deposition (ALD) using TiCl4 and H2O as precursors. Pure TiO2-II was synthesized at substrate temperatures ranging from 375 to 550degreesC while the films grown at 350 and 600degrees C contained mixed anatase-TiO2-II and rutile-TiO2-II phases respectively. Transformation of ALD-grown TiO2-II into rutile occurred on post-growth annealing at temperatures as high as 700degreesC.