Recent results on switching, fatigue and electrical characterization of sol-gel based PZT capacitors

Abstract

Recent interest in the use of capacitors, utilizing sol-gel derived PZT for non-volatile memories and ULSI DRAM cells, has made it imperative to thoroughly characterize these devices. This paper shows state-of-the-art device data in the following regimes: (1) hysteresis versus temperature and frequency; (2) temperature dependent i-t; (3) polarization versus applied voltage; (4) I-V characteristics over temperature using triangular voltage sweep (TVS) stress; (5) static dielectric constant versus temperature and frequency; (6) leakage current; (7) time dependent breakdown under constant d.c. bias; (8) fatigue at varying temperatures; and (9) retention data. Wherever appropriate, simple models are also described to explain the measured data.