Field-effect transistors based on poly(p-phenylene vinylene) doped by ion implantation

Abstract

We have fabricated metal‐insulator‐semiconductor field‐effect transistors (MISFETs), with thin films of polycrystalline poly(p‐phenylene vinylene) (PPV) as the semiconducting layer and report here the successful operation of a PPV MISFET based on the p‐type doping of the polymer layer by ion implantation of iodine. The measured field‐effect mobility of the charge carriers in this ion‐ implanted PPV is in the range of 10⁻⁷ to 10⁻⁸ cm²/V s. These values are in the same range as those obtained from a PPV MISFET in which the PPV was doped from the gas phase.