Electro-optical properties of polymeric semiconductor devices constructed from poly (3-hexyl thienylene)
- 6 May 1991
- journal article
- Published by Elsevier BV in Synthetic Metals
- Vol. 41 (3), 1045-1050
- https://doi.org/10.1016/0379-6779(91)91552-l
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Charge storage on a conducting polymer in solutionMacromolecules, 1989
- Electroabsorption and nonlinear optical constants of trans-polyacetylene and poly(3-hexylthiophene)Synthetic Metals, 1989
- Photoexcitation and doping studies of poly(3-hexylthienylene)Physical Review B, 1988
- New semiconductor device physics in polymer diodes and transistorsNature, 1988
- Thermochromism, Photochromism and Anomalous Temperature Dependence of Luminescence in Poly(3-Alkylthiophene) FilmJapanese Journal of Applied Physics, 1988
- Polarons and bipolarons on a conducting polymer in solutionMacromolecules, 1987
- Photogeneration of confined soliton pairs (bipolarons) in polythiophenePhysical Review Letters, 1986
- Charge storage in doped poly(thiophene): Optical and electrochemical studiesPhysical Review B, 1984
- Optical absorption from polarons in a model of polyacetylenePhysical Review B, 1983
- TRANSIENT VOLTAGE BREAKDOWN DUE TO AVALANCHE IN MIS CAPACITORSApplied Physics Letters, 1966