A microstructural comparison of the initial growth of AlN and GaN layers on basal plane sapphire and sic substrates by low pressure metalorganic chemical vapor deposition
- 1 April 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (4), 241-247
- https://doi.org/10.1007/bf02659682
Abstract
No abstract availableKeywords
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