Formation of quantum dots in twofold cleaved edge overgrowth

Abstract

The formation of quantum dots at the juncture of three quantum-well planes, which can be fabricated with two-fold cleaved edge overgrowth, is predicted. The localization energy of the exciton ground state with respect to the connected quantum wires can exceed 10 meV for the GaAs/${\mathrm{Al}}_{\mathrm{x}}$ ${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As system.