Dark-Field Contrast of Elements in High-Voltage Electron Microscopy
- 1 May 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (5R)
- https://doi.org/10.1143/jjap.36.2918
Abstract
A new and simple expression developed by us has been used for the estimation of contrast of thin amorphous specimens in the tilted-beam mode of dark field (DF) imaging using a conventional transmission electron microscope (CTEM). DF contrasts calculated for thin amorphous films of some representative elements in the electron accelerating voltage range between 0.1 to 3.0 MV have been compared with the corresponding bright field (BF) contrasts. The magnitude of the gain in contrast in the DF mode compared with BF one, observed over a wide range of accelerating voltage (φ), microscope aperture (α) and atomic number (Z) of elements, has been highlighted.Keywords
This publication has 19 references indexed in Scilit:
- Atomic Species Analysis and Three-Dimensional Observation by High-Angle Hollow-Cone Dark-Field Transmission Electron MicroscopyJapanese Journal of Applied Physics, 1995
- Electron scattering in high voltage electron microscopyUltramicroscopy, 1978
- Contrast in unstained sections: a comparison of bright and dark field electron microscopyJournal of Ultrastructure Research, 1975
- Single atom image contrast: conventional dark‐field and bright‐field electron microscopyJournal of Microscopy, 1975
- A scanning microscope with 5 Å resolutionJournal of Molecular Biology, 1970
- Enhanced contrast in electron microscopy of unstained biological materialJournal of Microscopy, 1969
- Fine Lattice Fringes Resolved by the Bright- and Dark-Field Axial IlluminationsJapanese Journal of Applied Physics, 1967
- A New High-resolution Dark-field Electron Microscope TechniqueNature, 1964
- HIGH-VOLTAGE ELECTRON MICROSCOPY*Journal of the Royal Microscopical Society, 1962
- The Theory of Absolute Reaction Rates and the Conductivity of Hydrocarbons at High Field StrengthsPhysical Review B, 1942