Hydrogenated amorphous-silicon thin films produced by ion plating
- 1 June 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (11), 909-910
- https://doi.org/10.1063/1.91363
Abstract
Ion plating techniques have been used to produce amorphous‐silicon thin films which contain up to 25 atomic percent hydrogen. The Si–H bond stretching mode observed for hydrogenated amorphous‐silicon thin films produced by glow‐discharge decomposition methods is also observed for these ion‐plated films. Optical absorptivity measurements for ion‐plated films give band‐gap values between 1.58 and 1.90 eV.Keywords
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