Hydrogen passivation of copper-related defects in germanium
- 1 February 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (3), 253-255
- https://doi.org/10.1063/1.93064
Abstract
The passivation of deep acceptor level defects (Ev +0.33 eV, Ev +0.19 eV) associated with copper in single-crystal germanium by reaction with atomic hydrogen has been observed using deep level transient spectroscopy. The concentration profile of the Ev +0.33 eV center is presented as a function of the duration and temperature of the exposure to atomic hydrogen—when exposed for 3 h at 300 °C, 90% of the acceptor defects were passivated to a depth of ∼80 μm.Keywords
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