Cyclotron resonance of two-dimensional holes in GaAsAlGaAs multi-quantum wells
- 3 April 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 170 (1-2), 587-592
- https://doi.org/10.1016/0039-6028(86)91024-1
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Temperature dependence of hole mobility in GaAs-Ga1−xAlxAs heterojunctionsApplied Physics Letters, 1985
- Hole Subband at GaAs/AlGaAs Heterojunctions and Quantum WellsJournal of the Physics Society Japan, 1985
- Effective masses of holes at GaAs-AlGaAs heterojunctionsPhysical Review B, 1985
- Effect of Inversion Symmetry on the Band Structure of Semiconductor HeterostructuresPhysical Review Letters, 1984
- Calculation of hole subbands at the GaAs-interfacePhysical Review B, 1984
- Energy Structure and Quantized Hall Effect of Two-Dimensional HolesPhysical Review Letters, 1983
- Fractional Quantization of the Hall EffectPhysical Review Letters, 1983
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956