Very high modulation efficiency of ultftalow threshold current single quantum well InGaAs lasers

1 January 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (17), 1525-1526
https://doi.org/10.1049/el:19931016

Abstract

A record high current modulation efficiency of 5 GHz/ √(mA) has been demonstrated in an ultralow threshold strained layer single quantum well InGaAs laser.

Keywords

INGAAS
MODULATION EFFICIENCY
THRESHOLD STRAINED LAYER
SINGLE QUANTUM WELL INGAAS LASERS
III-V SEMICONDUCTORS
CURRENT MODULATION

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