Electron paramagnetic resonance study on the annealing behavior of vacuum deposited amorphous silicon on crystalline silicon
- 1 November 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (11), 6617-6622
- https://doi.org/10.1063/1.328615
Abstract
Structure of amorphous silicon (a-Si) vacuum deposited on single-crystal (100) silicon (c-Si) with and without clean surfaces achieved by ion sputtering and annealing has been examined by using electron paramagnetic resonance (EPR) and transmission electron microscopy (TEM) as a function of annealing temperature. Annealing behavior of EPR signal can be explained well on the basis of TEM observation that there are void networks in a-Si film deposited on c-Si with native oxide but no such structure in a-Si film on c-Si with clean surface. Structure of a-Si, where solid phase epitaxial growth occurs at a high rate, is compared with that of ion bombarded a-Si.Keywords
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