Determination of the exchange interaction parameters from interband magnetoemission in Pb1-xMnxSe

Abstract

The magnetic field dependence of diode laser emission has been investigated in Pb_1-xMn_xSe diodes with low MnSe contents (x<or=0.02). The values of the effective g-factor of holes and conduction electrons have been determined. The results indicate that there is a major contribution from the exchange interaction between the band carriers and localized Mn magnetic moments to the g-factor of holes. The exchange interaction parameters have been found to be A=-0.08 eV and B=0.02 eV for the valence and conduction bands respectively.