Growth mode and strain relaxation during the initial stage of InxGa1−xAs growth on GaAs(001)
- 6 January 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (1), 74-76
- https://doi.org/10.1063/1.107379
Abstract
The growth mode and relaxation of the misfit strain of thin InxGa1−xAs layers grown by molecular‐beam epitaxy on GaAs(001) were studied by plan‐view transmission electron microscopy. The indium concentration was varied between x=0.13 and x=1.0. The transition from two‐dimensional to island growth was found at x=0.4. The island growth mode is characterized by islands of different sizes in various states of strain relaxation which is determined by the density of misfit dislocations at the interface.Keywords
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