Electrical properties and resonance scattering in heavily doped semiconductors
- 31 July 1964
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 2 (7), 191-195
- https://doi.org/10.1016/0038-1098(64)90286-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Electrical Properties of Heavily Doped SiliconJournal of Applied Physics, 1963
- Energy Bands in SemiconductorsJournal of Applied Physics, 1962
- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961
- Theory of Mobility of Electrons in SolidsPublished by Elsevier ,1957
- XCIV. Scattering of electrons and holes by charged donors and acceptors in semiconductorsJournal of Computers in Education, 1955
- Multiple Scattering of WavesReviews of Modern Physics, 1951