Growth and electrical properties of deuterated TGS produced by the rotating disc technique
- 14 April 1979
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 12 (4), 633-643
- https://doi.org/10.1088/0022-3727/12/4/020
Abstract
The growth of fully deuterated D(3) TGS, both alanine-doped and undoped, is described. The rotating disc method of growth was used with modified apparatus to facilitate crystal handling and reduce loss of deuteration in solution. Some characteristic types of cracking occur when highly deuterated material grown on undoped crystal were subjected to extensive electrical measurements. A selection of comparative results is reported, and attention is drawn to the effect of thermal cycling on the doped material.Keywords
This publication has 6 references indexed in Scilit:
- Orientation dependence of I-alanine incorporation in TGS crystalsJournal of Materials Science, 1978
- The growth of large area, uniformly doped TGS crystalsJournal of Crystal Growth, 1976
- Domain structure and dielectric properties of TGS and DTGS single crystals depending on growth conditionsCrystal Research and Technology, 1975
- Characterization of fully deuterated triglycine sulfate (ND2CD2COOD)3D2SO4Ferroelectrics, 1974
- Pyroelectric image tubesContemporary Physics, 1973
- Preparation of solid solutions of deuterated triglycine sulphate and concentration dependence of some of their ferroelectric propertiesCzechoslovak Journal of Physics, 1968