Large second-order optical nonlinearities in pulsed laser ablated silicon carbide thin films

Abstract

Large second‐order nonlinear optical response has been observed in silicon carbide thin films deposited by pulsed laser ablation on sapphire and fused silica substrates; films on both substrates were uniform and optically transparent but exhibited distinct orientations. The d₃₃ values of the sapphire‐substrate samples were determined to be 10 pm/V.