Subband structure engineering for performance enhancement of Si MOSFETs

23 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 219-222
https://doi.org/10.1109/iedm.1997.650345

Abstract

This paper presents a new strategy to enhance the current drive of Si MOSFETs, utilizing a subband structure engineering. It is found that SOI MOSFETs with SOI thickness thinner than the inversion layer of bulk MOSFETs can provide higher current drive than bulk MOSFETs, because of the significant modulation of the subband structure. This performance enhancement is attributed to the increase in both the inversion-layer mobility and the inversion-layer capacitance.

Keywords

MOSFETS
CAPACITANCE
TENSILE STRAIN
ELECTRONS
CONDUCTIVITY
EFFECTIVE MASS
SEMICONDUCTOR DEVICES
LABORATORIES
ELECTRIC VARIABLES
TEMPERATURE

This publication has 2 references indexed in Scilit:

Two-dimensional electron transport in semiconductor layers. I. Phonon scattering
Annals of Physics, 1981
Self-Consistent Results for $n$ -Type Si Inversion Layers
Physical Review B, 1972

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