High-mobility selectively doped GaAs/GaAlAs structures grown by low-pressure OM-VPE

Abstract

We report the growth of high-quality selectively doped GaAs/GaAlAs heterostructures grown by OM-VPE. Electron mobilities as high as 162000 cm2V−1s−1 have been obtained at 2 K. The sheet carrier concentration was varied between 5 × 1011 cm−2 and 1.5 × 1012 cm−2 by changing the ‘spacer’ thickness and the doping level in the n-type GaAlAs.