High-performance ZnO nanowire field effect transistors
Top Cited Papers
- 25 September 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (13)
- https://doi.org/10.1063/1.2357013
Abstract
ZnO nanowires with high crystalline and optical properties are characterized, showing strong effect of the surface defect states. In order to optimize the performance of devices based on these nanowires, a series of complementary metal-oxide semiconductor compatible surface passivation procedures is employed. Electrical transport measurements demonstrate significantly reduced subthreshold swing, high on/off ratio, and unprecedented field effect mobility. © 2006 American Institute of PhysicsKeywords
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