Some properties of inn films prepared by reactive evaporation
- 1 November 1974
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 3 (4), 821-828
- https://doi.org/10.1007/bf02651400
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Production of nitrides by active nitrogen. I. GaNMaterials Research Bulletin, 1973
- Electrical and Optical Properties of rf-Sputtered GaN and InNApplied Physics Letters, 1972
- Preparation and Structural Properties of GaN Thin FilmsJournal of Vacuum Science and Technology, 1969