Contactless probing of semiconductor dopant profile parameters by ir spectroscopy
- 1 April 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (4), 2697-2704
- https://doi.org/10.1063/1.326229
Abstract
The optical properties of arsenic‐implanted and annealed silicon in the infrared are investigated. A theory is fitted to transmittance and reflectance spectra. The fitted profile parameters are correlated with nonoptical measurement results. It is shown that infrared optical measurements offer the capability of probing nondestructively sheet resistance, electrically active dose, and surface concentration. Thus, it is a promising measurement technique for in‐line process control.Keywords
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