GaAs planar technology by molecular beam epitaxy (MBE)

Abstract

GaAs integrated circuits require planar growth of isolated devices on an insulating substrate. A new approach to achieve planar growth has been demonstrated by molecular beam epitaxy (MBE). In the MBE process polycrystalline and monocrystalline GaAs are selectively grown producing a pattern which consists of areas of device−quality single−crystal material isolated by semi−insulating polycrystalline material. The active device positions were defined by windows in SiO₂ layers which covered the Cr−doped semi−insulating GaAs substrate.