Very low bulk and surface recombination in oxidized silicon wafers
- 19 December 2001
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 17 (1), 35-38
- https://doi.org/10.1088/0268-1242/17/1/306
Abstract
Bulk and surface processes determine the recombination rate in crystalline silicon wafers. In this paper we report effective lifetime measurements for a variety of commercially available float-zone silicon wafers that have been carefully passivated using alnealed silicon oxide. Different substrate resistivities have been explored, including both p-type (boron) and n-type (phosphorus) dopants. Record high effective lifetimes of 29 and 32 ms have been measured for 90 Ω cm n-type and 150 Ω cm p-type silicon wafers, respectively. The dependence of the effective lifetime has been measured for excess carrier densities in the range of 1012–1017 cm−3. These results demonstrate that very low bulk and surface recombination rates can be maintained during high-temperature oxidation (1050 °C) by carefully optimizing the processing conditions.Keywords
This publication has 10 references indexed in Scilit:
- Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductorsJournal of Applied Physics, 1999
- Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline siliconJournal of Applied Physics, 1997
- Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance dataApplied Physics Letters, 1996
- Intrinsic upper limits of the carrier lifetime in siliconJournal of Applied Physics, 1994
- Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si-SiO2 interfaceJournal of Applied Physics, 1992
- Record high recombination lifetime in oxidized magnetic Czochralski siliconApplied Physics Letters, 1991
- Auger recombination in silicon at l o w carrier densitiesApplied Physics Letters, 1986
- Temperature dependence of the radiative recombination coefficient in siliconPhysica Status Solidi (a), 1974
- Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger—IISolid-State Electronics, 1972
- Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger—ISolid-State Electronics, 1972