Intrinsic Limitations on the High Speed Performance of High Electron Mobility Transistors
- 1 February 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (2A), L82
- https://doi.org/10.1143/jjap.22.l82
Abstract
An order of magnitude calculation has been performed for the qualitative comparison of the polar optical phonon limited electron mobility and drift velocity in GaAs/AlGaAs high electron mobility transistor (HEMT) and ordinary GaAs MESFET.Keywords
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