A microwave InP/SiO2 MISFET
- 15 April 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (8), 494-495
- https://doi.org/10.1063/1.90098
Abstract
Microwave power gain of insulated gate field‐effect transistors (FET’s) fabricated with 4‐μm gate lengths on n‐type InP is reported. The gain is comparable to that of GaAs Schottky gate devices of identical geometry.Keywords
This publication has 3 references indexed in Scilit:
- A microwave GaAs insulated gate FETApplied Physics Letters, 1978
- InP/SiO2 MIS structureJournal of Applied Physics, 1976
- InP Schottky-gate field-effect transistorsIEEE Transactions on Electron Devices, 1975