1.54-μm luminescence of erbium-implanted III-V semiconductors and silicon
- 15 November 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (10), 943-945
- https://doi.org/10.1063/1.94190
Abstract
Well-resolved sharply structured luminescence spectra at 1.54 μm were observed in erbium-implanted GaP, GaAs, InP, and Si. The optical transitions occur between the weakly crystal field split spin-orbit levels, 4I13/2→4I15/2, of Er3+(4f11). Typical spectral linewidths in GaAs are 2 cm−1(0.25 meV) at 6 K and 11 cm−1(1.36 meV) at room temperature.Keywords
This publication has 1 reference indexed in Scilit:
- The raising of angular momentum degeneracy of f-Electron terms by cubic crystal fieldsJournal of Physics and Chemistry of Solids, 1962