GaAs power f.e.t.s with electron-beam-defined gates

1 January 1977

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 13 (11), 312-313
https://doi.org/10.1049/el:19770228

Abstract

The fabrication of GaAs power f.e.t.s having 1 μm electron-beam-defined gates with 4800 μm total gatewidth is described. The microwave performance at X-band is compared with that of conventionally defined devices having 2 μm gate lengths.

Keywords

MICROWAVE PERFORMANCE
4800 MICRON GATE WIDTH
ELECTRON BEAM DEFINED GATES
1 MICRON LONG GATES
GAAS POWER FETS
X-BAND FET
FABRICATION

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