Oxide charge buildup and spread-out during channel-hot-carrier injection in NMOSFETs
- 1 June 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (6), 319-321
- https://doi.org/10.1109/55.145071
Abstract
Oxide charge buildup during channel-hot-carrier (CHC) injection was investigated by the use of a modified charge-pumping technique. An apparent 'turnaround' effect in local oxide charge density during low gate voltage (V/sub T/<V/sub g/<1/2 V/sub d/) stressing was observed. It can be explained by the dynamic evolution of the damage location caused by the continuous changes in the electric field distribution during CHC. Dependence on channel length is also presented.Keywords
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