Role of dangling bonds and antisite defects in rapid and gradual III-V laser degradation
- 1 October 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (7), 672-674
- https://doi.org/10.1063/1.93609
Abstract
Based on calculations of deep trap energies, it is proposed that the rapid (∼1 h) degradation of high‐radiance (≳1018 carriers/cm3) Ga‐rich III‐V semiconductor lasers proceeds through self‐reproducing dangling bond deep traps generated as a result of nonradiative recombination. This degradation mechanism can be inhibited by constructing lasers from alloys whose dangling bond energy levels do not lie within the fundamental band gap. The gradual (∼106 h) III‐V laser degradation is tentatively associated with recombination events at an anion‐on‐cation‐site deep trap.Keywords
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