The isolation and nucleation of misfit dislocations in strained epitaxial layers grown on patterned, ion-damaged GaAs
- 1 September 1990
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (9), 957-965
- https://doi.org/10.1007/bf02652922
Abstract
No abstract availableKeywords
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